Display device

ABSTRACT

A display device includes a display panel and an anti-reflection unit directly disposed on the display panel. The display panel includes first to third light emitting elements, each of which includes first and second electrodes, and a light emitting layer, which is disposed between the first electrode and the second electrode. The pixel definition layer includes a first portion, in which a light-emitting opening exposing the first electrode is defined, and a second portion, which is disposed on and overlapped with the first portion. The anti-reflection unit includes first to third color filters overlapped with the first to third light emitting elements, respectively, and a color spacer, which is overlapped with the second portion and is thicker than each of the first to third color filters.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority from and the benefit of Korean PatentApplication No. 10-2018-0062829, filed on May 31, 2018, which is herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION Field

Exemplary embodiments of the invention relate generally to a displaydevice, and more specifically, to a display device in which ananti-reflection unit and an input-sensing unit are integrated.

Discussion of the Background

Various display devices are being developed for use in multimediadevices, such as televisions, mobile phones, tablet computers,navigation systems, and gaming machines. A keyboard or a mouse is usedas an input device of the display device. A recent display deviceincludes a touch panel that is used as an input device.

Various signals are used to operate a display device, but such operationsignals may serve as noise sources in a touch panel, thereby causing lowtouch sensitivity of the touch panel.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

An exemplary embodiment of the inventive concepts provides a displaydevice, in which an input-sensing unit with low noise characteristics isintegrated.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

According to an exemplary embodiment, a display device may include adisplay panel including first to third light-emitting regions and anon-light-emitting region, which is adjacent to the first to thirdlight-emitting regions, an anti-reflection unit directly provided on thedisplay panel, and an input-sensing unit directly provided on theanti-reflection unit, the input-sensing unit including a sensingelectrode.

In an exemplary embodiment, the display panel may include first to thirdlight emitting elements overlapped with the first to thirdlight-emitting regions, respectively, each of the first to third lightemitting elements including a first electrode, which are in contact witha base insulating layer, and a second electrode, and a light emittinglayer, which is provided between the first electrode and the secondelectrode, a pixel definition layer, which is in contact with the baseinsulating layer and is provided below the second electrode, the pixeldefinition layer including a first portion, in which a light-emittingopening exposing the first electrode is defined, and a second portion,which is provided on, and partially overlapped with, the first portion,and a plurality of thin films provided on the second electrode.

In an exemplary embodiment, the anti-reflection unit may include firstto third color filters overlapped with the first to third light emittingelements, respectively, and a color spacer, which is overlapped with thesecond portion of the pixel definition layer and is thicker than each ofthe first to third color filters.

In an exemplary embodiment, a distance between a first portion of thesensing electrode, which is overlapped with the color spacer, and thebase insulating layer may be larger than a distance between a secondportion of the sensing electrode, which is not overlapped with the colorspacer, and the base insulating layer.

In an exemplary embodiment, a distance between the first portion of thesensing electrode and the second electrode may be substantially equal toa distance between the second portion of the sensing electrode and thesecond electrode.

In an exemplary embodiment, a thickness of the color spacer may belarger than a thickness of the second portion of the pixel definitionlayer.

In an exemplary embodiment, the color spacer may include at least afirst layer and a second layer on the first layer.

In an exemplary embodiment, the first layer may include the samematerial as one of the first to third color filters. The second layermay include the same material as another one of the first to third colorfilters.

In an exemplary embodiment, the first layer may have substantially thesame thickness as the one of the first to third color filters, and thesecond layer may have substantially the same thickness as the anotherone of the first to third color filters.

In an exemplary embodiment, the first layer and the one of the first tothird color filters may have a single body shape, and the second layerand the another one of the first to third color filters may have asingle body shape.

In an exemplary embodiment, the color spacer may further include a thirdlayer, which includes the same material as a remaining one of the firstto third color filters. The third layer may have substantially the samethickness as the remaining one of the first to third color filters andmay be provided on the first layer and the second layer.

In an exemplary embodiment, a sum of thicknesses of the second layer andthe third layer may be substantially equal to a thickness of the secondportion of the pixel definition layer.

In an exemplary embodiment, the anti-reflection unit further includes alight blocking layer, which is overlapped with the non-light-emittingregion, and in which a light blocking opening corresponding to thelight-emitting opening is defined.

In an exemplary embodiment, the light blocking layer may be providedbetween a topmost one of the thin films and the first layer.

In an exemplary embodiment, when viewed in a plan view, thelight-emitting opening may be positioned in the light blocking opening.

In an exemplary embodiment, when viewed in a plan view, an overlappingarea between the second portion of the pixel definition layer and thecolor spacer may be larger than or equal to 90% of an area of the colorspacer.

In an exemplary embodiment, when viewed in a plan view, the secondportion of the pixel definition layer may have a side length or adiameter ranging from about 10 μm to about 25 μm.

In an exemplary embodiment, the first portion and the second portion ofthe pixel definition layer may have a single body shape.

In an exemplary embodiment, the sensing electrode may be provided tohave a mesh structure, in which an electrode opening corresponding tothe light-emitting opening is defined.

According to an exemplary embodiment, a display device may include adisplay panel including first to third light-emitting regions and anon-light-emitting region, which is adjacent to the first to thirdlight-emitting regions, first to third color filters directly providedon the display panel and overlapped with the first to thirdlight-emitting regions, respectively, and an input-sensing unit directlyprovided on the first to third color filters. The input-sensing unit mayinclude a sensing electrode.

In an exemplary embodiment, the display panel may include first to thirdlight emitting elements overlapped with the first to thirdlight-emitting regions, respectively, each of the first to third lightemitting elements including a first electrode, which are in contact witha base insulating layer, and a second electrode, and a light emittinglayer, which is provided between the first electrode and the secondelectrode, a pixel definition layer, which is in contact with the baseinsulating layer and is provided below the second electrode, the pixeldefinition layer including a first portion, in which a light-emittingopening exposing the first electrode is defined, and a second portion,which is located adjacent to the first portion and has a thicknesslarger than the first portion, and a plurality of thin films provided onthe second electrode.

In an exemplary embodiment, a portion of the first color filter may beoverlapped with the second portion, and a portion of the second colorfilter may be overlapped with the second portion and may be provided onthe portion of the first color filter.

In an exemplary embodiment, a portion of the third color filter may beoverlapped with the second portion and may be provided on the portion ofthe second color filter.

In an exemplary embodiment, a sum of thicknesses of the portions of thesecond and third color filters, which are overlapped with the secondportion, may be substantially equal to the thickness of the secondportion.

In an exemplary embodiment, the display device may further include alight blocking layer, which is overlapped with the non-light-emittingregion, and in which a light blocking opening corresponding to thelight-emitting opening is defined.

According to an exemplary embodiment, a display device may include adisplay panel, an input-sensing unit directly provided on the displaypanel, the input-sensing unit including a sensing electrode, first andsecond color filters provided between the display panel and theinput-sensing unit, and a window unit provided on the input-sensingunit.

In an exemplary embodiment, the display panel may include firstelectrodes provided on a base insulating layer, a pixel definition layerprovided on the base insulating layer, the pixel definition layerincluding a first portion, in which openings exposing the firstelectrodes are defined, and a second portion, which is located adjacentto the first portion and has a thickness larger than the first portion,a second electrode provided on the pixel definition layer, and lightemitting layers provided between the second electrode and the firstelectrodes.

In an exemplary embodiment, a portion of the first color filter may beoverlapped with the second portion, and a portion of the second colorfilter may be overlapped with the second portion and may be provided onthe portion of the first color filter.

In an exemplary embodiment, a distance between a top surface of thewindow unit and a first portion of the sensing electrode, which isoverlapped with the first portion of the pixel definition layer, may belarger than a distance between the top surface of the window unit and asecond portion of the sensing electrode, which is overlapped with thesecond portion of the pixel definition layer.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 is a perspective view of a display device according to anexemplary embodiment.

FIG. 2A and 2B are cross-sectional views each illustrating a displaydevice according to an exemplary embodiment.

FIG. 3A is a cross-sectional view illustrating a display moduleaccording to an exemplary embodiment.

FIG. 3B is a plan view illustrating a display panel according to anexemplary embodiment.

FIG. 3C is an equivalent circuit diagram illustrating the pixelaccording to an exemplary embodiment.

FIGS. 3D and 3E are enlarged cross-sectional views each illustrating adisplay panel according to an exemplary embodiment.

FIG. 4A is a plan view illustrating a display panel, in a specific stepof a fabrication process according to an exemplary embodiment.

FIG. 4B is an enlarged plan view illustrating the display panel of FIG.4A.

FIG. 4C is a cross-sectional view illustrating a display panel, in aspecific step of a fabrication process according to an exemplaryembodiment.

FIG. 5A is a cross-sectional view illustrating a display deviceaccording to an exemplary embodiment.

FIG. 5B is a plan view illustrating an input-sensing layer according toan exemplary embodiment.

FIG. 5C is a plan view illustrating a first conductive layer of aninput-sensing layer according to an exemplary embodiment.

FIG. 5D is a plan view illustrating a second conductive layer of aninput-sensing layer according to an exemplary embodiment.

FIGS. 5E and 5F are cross-sectional views each illustrating a portion ofan input-sensing layer according to an exemplary embodiment.

FIG. 6A is an enlarged plan view illustrating a display device accordingto an exemplary embodiment.

FIGS. 6B, 6C, and 6D are enlarged plan views each illustrating a portionof the display device of FIG. 6A.

FIGS. 6E and 6F are enlarged cross-sectional views each illustrating adisplay device according to an exemplary embodiment.

FIGS. 7A, 7B, and 7C are enlarged cross-sectional views eachillustrating a display device according to an exemplary embodiment.

FIG. 8A is a plan view illustrating an input-sensing layer according toan exemplary embodiment.

FIG. 8B is an enlarged plan view illustrating a portion of aninput-sensing layer according to an exemplary embodiment.

FIGS. 9A, 9B, and 9C are perspective views each illustrating a displaydevice according to an exemplary embodiment.

FIGS. 10A and 10B are perspective views each illustrating a displaydevice according to an exemplary embodiment.

FIG. 11 is a perspective view illustrating a display device according toan exemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a perspective view illustrating a display device DD accordingto an exemplary embodiment. As shown in FIG. 1, the display device DDmay include a display surface DD-IS, which is used to display an imageIM. The display surface DD-IS may be defined to be parallel to a firstdirection axis DR1 and a second direction axis DR2. A normal directionof the display surface DD-IS (i.e., a thickness direction of the displaydevice DD) will be referred to as a third direction axis DR3.

In the following description, the third direction axis DR3 may be usedto differentiate a front or top surface of each element from a back orbottom surface. However, directions indicated by the first to thirddirection axes DR1, DR2, and DR3 may be just an example. Hereinafter,first to third directions may be directions indicated by the first tothird direction axes DR1, DR2, and DR3, respectively, and will beidentified with the same reference numbers.

In FIG. 1, the display device DD is illustrated to have a flat displaysurface, but the inventive concepts are not limited thereto. The displaysurface of the display device DD may have a curved or three-dimensionalshape. In the case where the display device DD has the three-dimensionaldisplay surface, the display surface may include a plurality of displayregions that are oriented in different directions. For example, thedisplay device DD may have a display surface that is shaped like that ofa polygonal pillar.

In the present exemplary embodiment, the display device DD may be arigid display device. However, the inventive concepts are not limitedthereto, and in an exemplary embodiment, the display device DD may be aflexible display device. In the present exemplary embodiment, thedisplay device DD, which can be used for a cellphone terminal, isexemplarily illustrated. The cellphone terminal may further include anelectronic module, a camera module, a power module, and so forth, whichare mounted on a mainboard and are provided in a bracket or case, alongwith the display device DD. The display device DD may be used forlarge-sized electronic devices (e.g., television sets and monitors) orsmall- or medium-sized electronic devices (e.g., tablets, car navigationsystems, game machines, and smart watches).

As shown in FIG. 1, the display surface DD-IS may include a displayregion DD-DA, which is used to display the image IM, and a non-displayregion DD-NDA, which is provided to be adjacent to the display regionDD-DA. The non-display region DD-NDA may not be used to display animage. As an example of the image IM, icon images are shown in FIG. 1.

As shown in FIG. 1, the display region DD-DA may have a rectangularshape. The non-display region DD-NDA may be provided to surround thedisplay region DD-DA. However, the inventive concepts are not limited tothis example, and in an exemplary embodiment, shapes of the display andnon-display regions DD-DA and DD-NDA may be variously changed in acomplementary manner.

FIG. 2A and 2B are cross-sectional views each illustrating the displaydevice DD according to an exemplary embodiment. FIGS. 2A and 2Billustrate cross sections, each of which is taken on a plane defined bythe second and third directions DR2 and DR3. In order to provide betterunderstanding of a stacking structure of a display panel and/orfunctional units, the display devices DD are illustrated in a simplifiedmanner in FIG. 2A and 2B.

In an exemplary embodiment, the display device DD may include a displaypanel, an input-sensing unit, an anti-reflection unit, and a windowunit. At least two of the display panel, the input-sensing unit, theanti-reflection unit, and the window unit may be formed by a successiveprocess or may be combined with each other by an adhesive member. FIG.2A illustrates an example in which an optically clear adhesive OCA isused as the adhesive member. In various exemplary embodiments to bedescribed below, the adhesive member may be a typical adhesive materialor a typical gluing agent. In an exemplary embodiment, theanti-reflection unit and the window unit may be replaced with other unitor may be omitted.

In FIGS. 2A and 2B, if a unit (e.g., the input-sensing unit, theanti-reflection unit, or the window unit) is formed on another elementby a successive process, the unit will be expressed using a term“layer”. If a unit (e.g., the input-sensing unit, the anti-reflectionunit, or the window unit) is combined to another element by an adhesivemember, the unit will be expressed using a term “panel”. The unitexpressed using the term “panel” may include a base layer (e.g., asynthetic resin film, a composite film, or a glass substrate) providinga base surface, but the unit expressed using the term “layer” may nothave the base layer. In other words, the unit expressed using the term“layer” may be placed on a base surface that is provided by anotherelement or unit.

The input-sensing unit, the anti-reflection unit, and the window unitmay be referred to as an input-sensing panel, an anti-reflection panel,and a window panel or to as an input-sensing layer, an anti-reflectionlayer, and a window layer, according to the presence or absence of thebase layer.

As shown in FIG. 2A, the display device DD may include a display panelDP, an anti-reflection layer RPL, an input-sensing layer ISL, ananti-reflection panel RPP, and a window panel WP. The anti-reflectionlayer RPL may be directly provided on the display panel DP, and theinput-sensing layer ISL may be directly provided on the display panelDP. In the present specification, the expression “an element B may bedirectly provided on an element A” means that an adhesive layer/memberis not provided between the elements A and B. In other words, after theformation of the element A, the element B may be formed on a basesurface, which is provided by the element A, through a successiveprocess.

Hereinafter, a structure including the display panel DP, theanti-reflection layer RPL, and the input-sensing layer ISL may bereferred to as a display module DM. An optically clear adhesive OCA maybe provided between the display module DM and the anti-reflection panelRPP and between the anti-reflection panel RPP and the window panel WP.

The display panel DP may be configured to generate an image, and theinput-sensing layer ISL may be configured to obtain information oncoordinates of an external input (e.g., a touch event). The displaymodule DM may further include a protection member provided on a bottomsurface of the display panel DP. The protection member and the displaypanel DP may be combined to each other by an adhesive member. Thedisplay device DD, which will be described with reference to FIG. 2B,may further include the protection member. In an exemplary embodiment,the anti-reflection panel RPP may be omitted.

According to an exemplary embodiment, the display panel DP may be alight-emitting type display panel, but the inventive concepts are notlimited to a specific type of the display panel DP. For example, thedisplay panel DP may be an organic light emitting display panel or aquantum dot light-emitting display panel. A light emitting layer of theorganic light emitting display panel may be formed of or include anorganic light emitting material. A light emitting layer of the quantumdot light-emitting display panel may include quantum dots and/or quantumrods. For the sake of simplicity, the description that follows willrefer to an example in which the display panel DP is the organic lightemitting display panel.

The anti-reflection layer RPL or the anti-reflection panel RPP may beconfigured to reduce reflectance of an external light that is incidentfrom an outer space to the window panel WP. In an exemplary embodiment,the anti-reflection panel RPP may include a phase retarder and apolarizer. The phase retarder may be of a film type or a liquid crystalcoating type and may include a λ/2 phase retarder and/or a λ/4 phaseretarder. The polarizer may also be of a film type or a liquid crystalcoating type. The polarizer of the film type may include an elongatedsynthetic resin film, whereas the polarizer of the liquid crystalcoating type may include liquid crystals arranged with a specificorientation. The phase retarder and the polarizer may further include aprotection film. At least one of the phase retarder, the polarizer, orthe protection films thereof may be used as a base layer of theanti-reflection panel RPP.

In an exemplary embodiment, the anti-reflection panel RPP may include adestructive interference structure. For example, the destructiveinterference structure may include a first reflection layer and a secondreflection layer which are provided on different layers. The firstreflection layer and the second reflection layer may be configured toallow a first reflection light and a second reflection light, which arerespectively reflected by them, to destructively interfere with eachother, and this may make it possible to reduce reflectance of theexternal light.

In an exemplary embodiment, the anti-reflection layer RPL may includecolor filters. Each of the color filters may be configured toselectively transmit an external light of which the wavelength is withina specific wavelength range and to absorb an external light havingwavelength beyond from the specific wavelength range. Theanti-reflection layer RPL may further include a light blocking layer.The anti-reflection layer RPL may include an organic layer, which isprovided on the color filters and/or the light blocking layer to reducea height variation caused by the presence of the color filters and/orthe light blocking layer or to have a flat top surface.

In an exemplary embodiment, the window panel WP may include a base filmWP-BS and a bezel pattern WP-BZ. The base film WP-BS may include a glasssubstrate and/or a synthetic resin film. The base film WP-BS may not belimited to a single-layered structure. For example, in an exemplaryembodiment, the base film WP-BS may include two or more films that arecombined to each other by an adhesive film.

The bezel pattern WP-BZ may be partially overlapped with the base filmWP-BS. The bezel pattern WP-BZ may be provided on a rear surface of thebase film WP-BS to define a bezel region of the display device DD (e.g.,the non-display region DD-NDA of FIG. 1).

The bezel pattern WP-BZ may be a colored organic layer and may be formedby, for example, a coating method. The bezel pattern WP-BZ may include aplurality of sequentially-stacked organic layers. A predeterminedpattern may be formed in at least one of such organic layers. The windowpanel WP may further include at least one functional coating layerprovided on the front surface of the base film WP-BS. The functionalcoating layer may include an anti-fingerprint layer, an anti-reflectionlayer, a hard coating layer, and so forth.

In FIG. 2B, the window layer WL (or the window panel WP) may beillustrated in a simplified manner (e.g., without clear distinction ofthe base film WP-BS and the bezel pattern WP-BZ). As shown in FIG. 2B,the display device DD may include the display panel DP, theanti-reflection layer RPL, the input-sensing layer ISL, and the windowlayer WL. Adhesive members may be omitted from the display device DD,and the anti-reflection layer RPL, the input-sensing layer ISL, and thewindow layer WL may be formed on a base surface, which is provided onthe display panel DP, by a successive process.

In FIGS. 2A and 2B, the input-sensing unit ISL is illustrated to beoverlapped with the entire top surface of the display panel DP, but theinventive concepts are not limited thereto. The input-sensing layer ISLmay be partially or wholly overlapped with the display region DD-DA.

The input-sensing layer ISL may be a touch sensing sensor, which isconfigured to sense a touch event from a user, or a fingerprint sensingsensor, which is configured to read a fingerprint of a user's finger.The input-sensing layer ISL may include a plurality of sensingelectrodes, and a pitch (or width) of the sensing electrodes may bechanged depending on an intended use of the input-sensing layer ISL. Forthe touch sensing sensor, the widths of the sensing electrodes may rangeseveral millimeters to several tens of millimeters, and for thefingerprint sensing sensor, the widths of the sensing electrodes mayrange from several tens of micrometers to several hundreds ofmicrometers.

In the case of the display device DD shown in FIGS. 2A and 2B, adistance between the input-sensing layer ISL and the display panel DPmay be small, compared with a panel-type input-sensing unit. This isbecause a thick adhesive member is not provided between theinput-sensing layer ISL and the display panel DP. However, in this case,the sensing sensitivity of the input-sensing layer ISL may be greatlyaffected by a noise generated in the display panel DP, compared thepanel-type input-sensing unit.

FIG. 3A is a cross-sectional view illustrating the display panel DPaccording to an exemplary embodiment. FIG. 3B is a plan viewillustrating the display panel DP according to an exemplary embodiment.FIG. 3C is an equivalent circuit diagram illustrating a pixel PXaccording to an exemplary embodiment. FIGS. 3D and 3E are enlargedcross-sectional views each illustrating the display panel DP accordingto an exemplary embodiment. The display panel DP to be described belowmay be applied to all of the display devices DD described with referenceto FIGS. 2A and 2B.

As shown in FIG. 3A, the display panel DP may include a base layer BL, acircuit device layer DP-CL on the base layer BL, a display device layerDP-OLED on the circuit device layer DP-CL, and an insulating layer TFL(hereinafter, an upper insulating layer) on the display device layerDP-OLED.

The base layer BL may be formed of or include a synthetic resin film.The synthetic resin layer may be formed on a working substrate, which isused to fabricate the display panel DP. Thereafter, a conductive layer,an insulating layer, and so forth may be formed on the synthetic resinlayer. If the working substrate is removed, the synthetic resin layermay be used as the base layer BL. The synthetic resin layer may be apolyimide-based resin layer, and the inventive concepts are not limitedto a specific material of the base layer BL. In addition, the base layerBL may include a glass substrate, a metal substrate, or anorganic/inorganic composite substrate.

The circuit device layer DP-CL may include at least one insulating layerand at least one circuit device. Hereinafter, an insulating layer in thecircuit device layer DP-CL will be referred to as an intermediateinsulating layer. The intermediate insulating layer may include at leastone intermediate inorganic layer and/or at least one intermediateorganic layer. The circuit device may include signal lines, pixeldriving circuits, and so forth. The formation of the circuit devicelayer DP-CL may include forming an insulating layer, a semiconductorlayer, and a conductive layer using a coating or deposition process andpatterning the insulating layer, the semiconductor layer, and theconductive layer using a photolithography and etching process.

The display device layer DP-OLED may include a light emitting element.The display device layer DP-OLED may include organic light emittingdiodes, which are used as the light emitting element. The display devicelayer DP-OLED may include a pixel definition layer, which is formed ofor includes an organic material.

The upper insulating layer TFL may include a thin encapsulation layer,which is used to seal the circuit device layer DP-CL, as will bedescribed below. The upper insulating layer TFL may further includefunctional layers (e.g., a capping layer, an anti-reflection layer, or arefractive index control layer).

As shown in FIG. 3B, the display panel DP may include a display regionDP-DA and a non-display region DP-NDA, when viewed in a plan view. Inthe present exemplary embodiment, the non-display region DP-NDA may bedefined along a border of the display region DP-DA. The display regionDP-DA and the non-display region DP-NDA of the display panel DP maycorrespond to the display region DD-DA and the non-display regionDD-NDA, respectively, of the display device DD of FIGS. 1, 2A, and 2B.

The display panel DP may include a driving circuit GDC, a plurality ofsignal lines SGL, and a plurality of pixels PX. The pixels PX may beprovided in the display region DP-DA. Each of the pixels PX may includea light emitting element and a pixel driving circuit connected thereto.The driving circuit GDC, the signal lines SGL, and the pixel drivingcircuit may be included in the circuit device layer DP-CL shown in FIG.3A.

The driving circuit GDC may include a scan driving circuit. The scandriving circuit may be configured to generate a plurality of scansignals and to sequentially output the scan signals to a plurality ofscan lines GL to be described below. In addition, the scan drivingcircuit may be configured to output other control signals to a drivingcircuit of the pixel PX.

The scan driving circuit may include a plurality of thin-filmtransistors, which are formed by the same method as that for the drivingcircuit of the pixels PX or for example by a low-temperaturepolycrystalline silicon (LTPS) or low-temperature polycrystalline oxide(LTPO) process.

The signal lines SGL may include scan lines GL, data lines DL, a powerline PL, and a control signal line CSL. Each of the scan lines GL may beconnected to corresponding ones of the pixels PX, and each of the datalines DL may be connected to corresponding ones of the pixels PX. Thepower line PL may be connected to the pixels PX. The control signal lineCSL may be used to provide control signals to the scan driving circuit.

The signal lines SGL may be connected to a circuit board (not shown).For example, the signal lines SGL may be connected to a timing controlcircuit, which is provided in the form of an integrated circuit (IC)chip mounted on the circuit board. In an exemplary embodiment, the ICchip may be provided on the non-display region DP-NDA and may be isconnected to the signal lines SGL.

FIG. 3C illustrates a scan line GL, a data line DL, a power line PL, anda pixel PX connected thereto. The structure of the pixel PX is notlimited to the example of FIG. 3C and may be variously changed.

An organic light emitting diode OLED, which may be a top-emission typediode or a bottom-emission type diode, may be provided. The pixel PX mayinclude a first or switching transistor T1, a second or drivingtransistor T2, and a capacitor Cst, which are used as parts of a pixeldriving circuit for driving the organic light emitting diode OLED. Afirst power voltage ELVDD may be provided to the second transistor T2,and a second power voltage ELVSS may be provided to the organic lightemitting diode OLED. The second power voltage ELVSS may be lower thanthe first power voltage ELVDD.

The first transistor T1 may be configured to output a data signalapplied to the data line DL, in response to a scan signal applied to thescan line GL. The capacitor Cst may be s charged to a voltagecorresponding to a data signal received from the first transistor T1.The second transistor T2 may be connected to the organic light emittingdiode OLED. The second transistor T2 may be used to control a drivingcurrent flowing through the organic light emitting diode OLED, inresponse to an amount of electric charges stored in the capacitor Cst.

The structure of the pixel PX is not limited to the equivalent circuitdiagram of FIG. 3C. For example, the pixel PX may be configured toinclude a plurality of transistors (e.g., seven or eight transistors).In addition, the pixel PX may be configured to include two or morecapacitors. In an exemplary embodiment, the organic light emitting diodeOLED may be provided between and coupled to the power line PL and thesecond transistor T2.

Each of FIGS. 3D and 3E illustrate a portion of the display panel DP,whose pixels are configured to have the same circuit structure as theequivalent circuit shown in FIG. 3C. Hereinafter, the display panel DPwill be described in more detail with reference to FIG. 3D.

The circuit device layer DP-CL, the display device layer DP-OLED, andthe upper insulating layer TFL may be sequentially provided on the baselayer BL. In the present exemplary embodiment, the circuit device layerDP-CL may include a buffer layer BFL, a first intermediate inorganiclayer 10, and a second intermediate inorganic layer 20, which are formedof inorganic materials, and an intermediate organic layer 30, which isformed of an organic material. The inorganic and organic materials arenot limited to specific materials. In an exemplary embodiment, thebuffer layer BFL may be selectively provided or may be omitted.

A semiconductor pattern OSP1 (hereinafter, a first semiconductorpattern) of the first transistor T1 and a semiconductor pattern OSP2(hereinafter, a second semiconductor pattern) of the second transistorT2 may be provided on the buffer layer BFL. The first and secondsemiconductor patterns OSP1 and OSP2 may be formed of or include atleast one of amorphous silicon, poly silicon, or metal oxidesemiconductor materials.

The first intermediate inorganic layer 10 may be provided on the firstsemiconductor pattern OSP1 and the second semiconductor pattern OSP2. Acontrol electrode GE1 (hereinafter, a first control electrode) of thefirst transistor T1 and a control electrode GE2 (hereinafter, a secondcontrol electrode) of the second transistor T2 may be provided on thefirst intermediate inorganic layer 10. The first control electrode GE1and the second control electrode GE2 may be fabricated by the samephotolithography process as that for the scan lines GL (e.g., see FIG.3B).

The second intermediate inorganic layer 20 may be provided on the firstis intermediate inorganic layer 10 to cover the first control electrodeGE1 and the second control electrode GE2. An input electrode DEI and anoutput electrode SE1 (hereinafter, a first input electrode and a firstoutput electrode) of the first transistor T1 and an input electrode DE2and an output electrode SE2 (hereinafter, a second input electrode and asecond output electrode) of the second transistor T2 may be provided onthe second intermediate inorganic layer 20.

The first input electrode DE1 and the first output electrode SE1 may berespectively connected to the first semiconductor pattern OSP1 through afirst penetration hole CH1 and a second penetration hole CH2, which areformed to penetrate the first intermediate inorganic layer 10 and thesecond intermediate inorganic layer 20. The second input electrode DE2and the second output electrode SE2 may be respectively connected to thesecond semiconductor pattern OSP2 through a third penetration hole CH3and a fourth penetration hole CH4, which are formed to penetrate thefirst intermediate inorganic layer 10 and the second intermediateinorganic layer 20. In an exemplary embodiment, at least one of thefirst transistor T1 and the second transistor T2 may be provided to havea bottom gate structure.

The intermediate organic layer 30 may be provided on the secondintermediate inorganic layer 20 to cover the first input electrode DE1,the second input electrode DE2, the first output electrode SE1, and thesecond output electrode SE2. The intermediate organic layer 30 may beprovided to have a flat surface (e.g., a flat top surface).

The display device layer DP-OLED may be provided on the intermediateorganic layer 30. The display device layer DP-OLED may include a pixeldefinition layer PDL and the organic light emitting diode OLED. A firstelectrode AE may be provided on the intermediate organic layer 30. Thefirst electrode AE may be connected to the second output electrode SE2through a fifth penetration hole CH5 penetrating the intermediateorganic layer 30. An opening OP may be defined in the pixel definitionlayer PDL. The opening OP of the pixel definition layer PDL may beformed to expose at least a portion of the first electrode AE.Hereinafter, the opening exposing the first electrode AE will bereferred to as a light-emitting opening, for a clear distinction fromother openings.

As shown in FIG. 3D, the pixel definition layer PDL may be divided intotwo distinguishable portions. For example, the pixel definition layerPDL may include a first portion PDL-1, in which the light-emittingopening OP exposing the first electrode AE is defined, and a secondportion PDL-2, which is provided on and partially overlapped with thefirst portion PDL-1. In other words, the first portion PDL-1 and thesecond portion PDL-2 may be two portions that are distinguished fromeach other in the third direction DR3. The first portion PDL-1 may be incontact with the intermediate organic layer 30, and in the presentexemplary embodiment, the intermediate organic layer 30 may be definedas a base insulating layer.

Meanwhile, the pixel definition layer PDL may also be divided into twoportions, when viewed in a plan view. For example, as shown in FIG. 3E,when viewed in the second direction DR2, the pixel definition layer PDLmay include a first portion PDL-10, in which the light-emitting openingOP exposing the first electrode AE is defined, and a second portionPDL-20, which is located adjacent to the first portion PDL-10 and isthicker than the first portion PDL-10.

A thickness TH1 of the first portion PDL-10 may be about 40% to 60%(e.g., 50%) of a thickness TH2 of the second portion PDL-20. Thethickness TH2 may be a vertical length of the second portion PDL-20,which is measured at a center region of the second portion PDL-20.

The two portions of the pixel definition layer PDL described withreference to FIGS. 3D and 3E may be formed using a halftone mask. Forexample, the formation of the pixel definition layer PDL may includeforming a preliminary pixel definition layer and removing a portion ofthe preliminary pixel definition layer in the thickness direction. Thetwo portions, which are formed using the halftone mask, may have asingle body shape.

A method of fabricating the pixel definition layer PDL is not limited tothe method using the halftone mask. In an exemplary embodiment, theformation of the pixel definition layer PDL may include forming aninsulating layer, which corresponds to the first portion PDL-1 of FIG.3D, and then forming a spacer, which corresponds to the second portionPDL-2, using a printing method. In this case, there may be an interfacebetween the two portions of the pixel definition layer PDL.

The display region DP-DA of FIG. 3B may include a light-emitting regionPXA and a non-light-emitting region NPXA, which is located adjacent tothe light-emitting region PXA, similar to the structure shown in FIGS.3D and 3E. The non-light-emitting region NPXA may be provided tosurround the light-emitting region PXA. In the present exemplaryembodiment, the light-emitting region PXA may be defined to correspondto a portion of the first electrode AE exposed by the light-emittingopening OP.

In an exemplary embodiment, the light-emitting region PXA may beoverlapped with at least one of the first and second transistors T1 andT2. At this exemplary embodiment, the light-emitting opening OP may bewider than that shown in FIGS. 3D and 3E. The first electrode AE and thelight emitting layer EML described later may also be widenedcorresponding to the light-emitting opening OP.

A hole control layer HCL may be provided in both of the light-emittingregion PXA and the non-light-emitting region NPXA. A common layer, suchas the hole control layer HCL, may be provided in common in the pixelsPX (e.g., see FIG. 3B). The hole control layer HCL may include a holetransport layer and, in an exemplary embodiment, the hole control layerHCL may further include a hole injection layer.

The light emitting layer EML may be provided on the hole control layerHCL. The light emitting layer EML may be provided on a regioncorresponding to the light-emitting opening OP. In other words, thelight emitting layer EML may include a plurality of isolated patterns,each of which is provided for a corresponding one of the pixels PX. Thelight emitting layer EML may be formed of or include at least one oforganic or inorganic materials. The light emitting layer EML may beconfigured to generate a specific color light.

An electron control layer ECL may be provided on the light emittinglayer EML. The electron control layer ECL may also be provided in thepixels PX (e.g., see FIG. 3B). The electron control layer ECL mayinclude an electron transport layer, and in an exemplary embodiment, theelectron control layer ECL may further include an electron injectionlayer. A second electrode CE may be provided on the electron controllayer ECL. The second electrode CE may be provided in common in thepixels PX.

The upper insulating layer TFL may be provided on the second electrodeCE. The upper insulating layer TFL may include a plurality of thinfilms. For example, as shown in FIG. 3D, the upper insulating layer TFLmay include a thin encapsulation layer TFE and a capping layer CPL,which are different from each other in terms of their functions.

In the present exemplary embodiment, the thin encapsulation layer TFEmay be provided to be fully overlapped with the display region DP-DA ofFIGS. 3A and 3B. The thin encapsulation layer TFE may be used tohermetically seal the organic light emitting diode OLED provided on thedisplay region DP-DA. The thin encapsulation layer TFE may not beprovided on the non-display region DP-NDA or may be provided on only aportion of the non-display region DP-NDA.

The thin encapsulation layer TFE may include at least one insulatinglayer. In an exemplary embodiment, the thin encapsulation layer TFE mayinclude at least one inorganic layer (hereinafter, an encapsulationinorganic layer). In an exemplary embodiment, the thin encapsulationlayer TFE may include at least one organic layer (hereinafter, anencapsulation organic layer) and at least one encapsulation inorganiclayer.

The encapsulation inorganic layer may be used to protect the displaydevice layer DP-OLED from moisture or oxygen, and the encapsulationorganic layer may be used to protect the display device layer DP-OLEDfrom a contamination material such as dust particles. The encapsulationinorganic layer may include at least one of a silicon nitride layer, asilicon oxynitride layer, a silicon oxide layer, a titanium oxide layer,or an aluminum oxide layer, but the inventive concepts are not limitedthereto. The encapsulation organic layer may include an acrylic organiclayer, but the inventive concepts are not limited thereto.

In an exemplary embodiment, the thin encapsulation layer TFE may includea silicon oxynitride layer, an organic monomer layer, and a siliconnitride layer, which are sequentially stacked on the second electrodeCE. The thin encapsulation layer TFE may further include a lithiumfluoride layer, which is provided between the second electrode CE and asilicon oxynitride layer.

The capping layer CPL may be provided to cover the display region DP-DAand the non-display region DP-NDA. The capping layer CPL mayhermetically seal the thin encapsulation layer TFE. In the case wherethe thin encapsulation layer TFE is provided to cover the whole displayregion DP-DA and the non-display region DP-NDA, the capping layer CPLmay be omitted.

In an exemplary embodiment, the organic light emitting diode OLED mayfurther include a resonance structure, which is used to control aresonance distance of light emitted from the light emitting layer EML.The resonance structure may be provided between the first electrode AEand the second electrode CE, and a thickness of the resonance structuremay be determined, based on a wavelength of light to be emitted from thelight emitting layer EML.

FIG. 4A is a plan view illustrating the display panel DP in a specificstep of a fabrication process according to an exemplary embodiment. FIG.4B is an enlarged plan view illustrating the display panel DP of FIG.4A. FIG. 4C is a cross-sectional view illustrating the display panel DPin a specific step of a fabrication process according to an exemplaryembodiment. Hereinafter, the pixel definition layer PDL of FIGS. 3D and3E will be described in more detail with reference to FIGS. 4A to 4C.

As shown in FIG. 4A, the pixel definition layer PDL may be overlappedwith the entire region of the display region DP-DA. As described withreference to FIGS. 3D and 3E, an organic layer may be formed on theintermediate organic layer 30 and may be patterned through aphotolithography process. As a result, the pixel definition layer PDL,which is divided into two portions and has a plurality of light-emittingopening, may be formed.

FIG. 4B shows an enlarged shape of a region ‘AA’ of FIG. 4A. As shown inFIG. 4B, three types of light-emitting openings may be formed in thepixel definition layer PDL. The light-emitting openings may beclassified into a first light-emitting opening OP-G, a secondlight-emitting opening OP-R, and a third light-emitting opening OP-B. Anarea of each of the first, second, and third light-emitting openingsOP-G, OP-R, and OP-B may be proportional to a light emitting area of acorresponding pixel.

The pixels PX of FIG. 3B may include green, red, and blue pixels, whichare configured to emit green, red, and blue lights, respectively. In thepresent exemplary embodiment, the first, second, and thirdlight-emitting openings OP-G, OP-R, and OP-B may correspond to the lightemitting elements of the green, red, and blue pixels, respectively.

As shown in FIG. 4B, when viewed in a plan view, the second portionPDL-2 may be provided at a region (hereinafter, a spacer region), whichis enclosed by two first light-emitting openings OP-G, one secondlight-emitting opening OP-R, and one third light-emitting opening OP-B.In an exemplary embodiment, a plurality of spacer regions may be definedin the pixel definition layer PDL, and the second portions PDL-2 may beprovided at some of the spacer regions.

The shape of the second portion PDL-2 may be variously changed. Forexample, when viewed in a plan view, the second portion PDL-2 may have acircular, rectangular, or square shape. A length of a side (or adiameter) of the second portion PDL-2 may range from about 10 μm toabout 25 μm. In this case, the second portion PDL-2 may meet functionalrequirement for a spacer to be described below. When viewed in a planview, the second portion PDL-2 may be spaced apart from the first,second, and third light-emitting openings OP-G, OP-R, and OP-B by adistance of about 5-10 μm.

As shown in FIG. 4C, the second portion PDL-2 may support a mask MSK.The mask MSK may be used in a subsequent process of depositing the lightemitting layer EML of FIGS. 3D and 3E. In an exemplary embodiment, themask MSK may be in contact with the hole control layer HCL provided onthe second portion PDL-2. In the process of depositing the lightemitting layer EML, the second portion PDL-2 may be used to support themask MSK, and thus, it may be possible to prevent active regions of thehole control layer HCL corresponding to the first, second, and thirdlight-emitting openings OP-G, OP-R, and OP-B from being in contact withthe mask MSK. That is, the second portion PDL-2 may be used as thespacer supporting the mask MSK.

As shown in FIG. 4C, a first-type first electrode AE-G, a second-typefirst electrode AE-R, and a third-type first electrode AE-B may beprovided at regions corresponding to the first, second, and thirdlight-emitting openings OP-G, OP-R, and OP-B, respectively. Thefirst-type first electrode AE-G may have a first area, the second-typefirst electrode AE-R may have a second area larger than the first area,and the third-type first electrode AE-B may have a third area largerthan the second area. A light emitting area of each pixel may beproportional to an area of a corresponding one of the first-, second-,and third-type first electrodes AE-G, AE-R, and AE-B.

FIG. 5A is a cross-sectional view illustrating the display device DDaccording to an exemplary embodiment. FIG. 5B is a plan viewillustrating the input-sensing layer ISL according to an exemplaryembodiment. FIG. 5C is a plan view illustrating a first conductive layerIS-CL1 of the input-sensing layer ISL according to an exemplaryembodiment. FIG. 5D is a plan view illustrating a second conductivelayer IS-CL2 of the input-sensing layer ISL according to an exemplaryembodiment. FIGS. 5E and 5F are cross-sectional views each illustratinga portion of the input-sensing layer ISL according to an exemplaryembodiment.

In FIG. 5A, to provide better understanding of a stacking structure ofthe input-sensing layer ISL, the display panel DP and theanti-reflection layer RPL are illustrated in a simplified manner. Ananti-reflection unit and a window unit may be provided on theinput-sensing layer ISL.

The input-sensing layer ISL may include at least one sensing electrode.The input-sensing layer ISL may further include a signal line, which isconnected to the sensing electrode, and at least one insulating layer.The input-sensing layer ISL may be configured to sense an external inputin, for example, a capacitance-sensing manner. However, the inventiveconcepts are not limited to a specific sensing method of theinput-sensing layer ISL, and in an exemplary embodiment, theinput-sensing layer ISL may be configured to sense an external input inan electromagnetic induction manner or in a pressure-sensing manner.

In an exemplary embodiment, as shown in FIG. 5A, the input-sensing layerISL may include a first conductive layer IS-CL1, a first insulatinglayer IS-IL1, a second conductive layer IS-CL2, and a second insulatinglayer IS-IL2. Each of the first and second conductive layers IS-CL1 andIS-CL2 may have a single-layered structure or a multi-layered structureincluding a plurality of layers stacked in the third direction DR3. Inthe case where one or both of the first and second conductive layersIS-CL1 and IS-CL2 have the single-layered structure may include a metallayer or a transparent conductive layer. The metal layer may be formedof or include at least one of molybdenum, silver, titanium, copper,aluminum, or alloys thereof.

The transparent conductive layer may be formed of or include at leastone of transparent conductive oxides, such as indium tin oxide (ITO),indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide(ITZO). In an exemplary embodiment, the transparent conductive layer mayinclude a conductive polymer (e.g., PEDOT), metal nanowires, orgraphene.

In the case where one or both of the first and second conductive layersIS-CL1 and IS-CL2 have the multi-layered structure may include aplurality of metal layers. For example, the conductive layer having themulti-layered structure may be provided to have a triple-layeredstructure including a titanium layer, an aluminum layer, and a titaniumlayer. Alternatively, the conductive layer having the multi-layeredstructure may include at least one metal layer and at least onetransparent conductive layer.

Each of the first and second conductive layers IS-CL1 and IS-CL2 mayinclude a plurality of conductive patterns. In the followingdescription, the conductive patterns in the first conductive layerIS-CL1 will be referred to as first conductive patterns, and theconductive patterns in the second conductive layer IS-CL2 will bereferred to as second conductive patterns. Each of the first and secondconductive patterns may include sensing electrodes and signal lines.

A stacking structure and a material of the sensing electrode may bedetermined in consideration of technical requirements on sensingsensitivity. The sensing sensitivity may be affected by RC delay, andhere, since the metal layer has electric resistance lower than that ofthe transparent conductive layer, the sensing electrodes formed of themetal layer may have a reduced RC delay. Thus, it may be possible toreduce a charging time taken to charge a capacitor between the sensingelectrodes. By contrast, in the case where the sensing electrodesinclude the transparent conductive layer, the sensing electrodes may behardly recognized by a user, compared with the sensing electrodes formedof the metal layer. Furthermore, the sensing electrodes may be providedto have an increased input area, and this may make it possible toincrease capacitance of the capacitor.

In an exemplary embodiment, the sensing electrodes may be provided toform a mesh structure, as will be described below, and in this case, itmay be possible to prevent the sensing electrodes including the metallayer from being recognized by a user. A thickness of the upperinsulating layer TFL may be adjusted to prevent the input-sensing layerISL from being affected by noise caused by elements of the displaydevice layer DP-OLED. Each of the first and second insulating layersIS-IL1 and IS-IL2 may be provided to have a single- or multi-layeredstructure. Each of the first and second insulating layers IS-IL1 andIS-IL2 may be formed of or include at least one of inorganic, organic,or composite materials.

At least one of the first and second insulating layers IS-IL1 and IS-IL2may include an inorganic layer. The inorganic layer may be formed of orinclude at least one of aluminum oxide, titanium oxide, silicon oxide,silicon oxynitride, zirconium oxide, or hafnium oxide.

At least one of the first and second insulating layers IS-IL1 and IS-IL2may include an organic layer. The organic layer may be formed of orinclude at least one of acrylic resins, methacryl resins, polyisopreneresins, vinyl resins, epoxy resins, urethane resins, cellulose resins,siloxane resins, polyimide resins, polyamide resins, or perylene resins.

As shown in FIG. 5B, the input-sensing layer ISL may include firstsensing electrodes IE1-1 to 1E1-5, first signal lines SL1-1 to SL1-5connected to the first sensing electrodes IE1-1 to 1E1-5, second sensingelectrodes 1E2-1 to 1E2-4, and second signal lines SL2-1 to SL2-4connected to the second sensing electrodes 1E2-1 to 1E2-4. Theinput-sensing layer ISL may include an optical dummy electrode, which isprovided in a border region between the first sensing electrodes 1E1-1to 1E1-5 and the second sensing electrodes 1E2-1 to 1E2-4.

The first sensing electrodes IE1-1 to 1E1-5 may be provided to intersectthe second sensing electrodes 1E2-1 to 1E2-4. The first sensingelectrodes IE1-1 to 1E1-5 may be arranged in the first direction DR1,and each of the first sensing electrodes 1E1-1 to 1E1-5 may extend inthe second direction DR2. The first and second sensing electrodes IE1-1to 1E1-5 and 1E2-1 to 1E2-4 may be configured to sense an external inputin a mutual-capacitance manner and/or in a self-capacitance manner. Inan exemplary embodiment, during a first period, coordinates of anexternal input may be calculated in the mutual-capacitance manner, andduring a second period, the coordinates of the external input may bere-calculated in the self-capacitance manner.

Each of the first sensing electrodes IE1-1 to 1E1-5 may include firstsensor portions SP1 and first connecting portions CP1. Each of thesecond sensing electrodes 1E2-1 to 1E2-4 may include second sensorportions SP2 and second connecting portions CP2. Two of the first sensorportions SP1, which are located at opposite ends of the first sensingelectrode, may have a small area or size (e.g., half area), comparedwith a central one of the first sensor portions SP1. Two of the secondsensor portions SP2, which are located at opposite ends of the secondsensing electrode, may have a small area or size (e.g., half area),compared with a central one of the second sensor portions SP2.

The inventive concepts are not limited to the exemplary shapes of thefirst and second sensing electrodes IE1-1 to 1E1-5 and 1E2-1 to 1E2-4,which are shown in FIG. 5B. In an exemplary embodiment, each of thefirst and second sensing electrodes 1E1-1 to 1E1-5 and 1E2-1 to 1E2-4may have a shape (e.g., a bar shape), which does not allow for a cleardistinction between the sensor portion and the connecting portion.Although each of the first and second sensor portions SP1 and SP2 isillustrated to have a diamond shape, the inventive concepts are notlimited thereto. For example, each of the first and second sensorportions SP1 and SP2 may have at least one of other polygonal shapes.

In each of the first sensing electrodes 1E1-1 to 1E1-5, the first sensorportions SP1 may be arranged in the second direction DR2, and in each ofthe second sensing electrodes 1E2-1 to 1E2-4, the second sensor portionsSP2 may be arranged in the first direction DR1. Each of the firstconnecting portions CPI may be provided to connect adjacent ones of thefirst sensor portions SP1 to each other, and each of the secondconnecting portions CP2 may be provided to connect adjacent ones of thesecond sensor portions SP2 to each other.

The first signal lines SL1-1 to SL1-5 may be connected to ends of thefirst sensing electrodes IE1-1 to 1E1-5, respectively. The second signallines SL2-1 to SL2-4 may be connected to opposite ends of the secondsensing electrodes 1E2-1 to 1E2-4. In an exemplary embodiment, the firstsignal lines SL1-1 to SL1-5 may also be connected to opposite ends ofthe first sensing electrodes IE1-1 to 1E1-5. In an exemplary embodiment,the second signal lines SL2-1 to SL2-4 may be connected to only one-sideends of the second sensing electrodes 1E2-1 to 1E2-4, respectively.

In the present exemplary embodiment, it may be possible to improvesensing sensitivity of the input-sensing layer ISL, compared with aninput-sensing unit, in which the second signal lines SL2-1 to SL2-4 areconnected to only one-side ends of the second sensing electrodes 1E2-1to 1E2-4, respectively. In the present exemplary embodiment, since thesecond signal lines SL2-1 to SL2-4, which are connected to opposite endsof the second sensing electrodes 1E2-1 to 1E2-4, are used to transmit adetection or transmission signal, the equivalent resistance is loweredin a current path. In the current path defined from one of the secondsensing electrodes 1E2-1 to 1E2-4 to one of the first sensing electrodesIE1-1 to 1E2-4, one second sensing electrode is two resistors areconnected in parallel in an equivalent circuit. The equivalentresistance is lowered so that the voltage drop of the detection signal(or the transmission signal) can be prevented, thereby preventing adecrease in sensing sensitivity.

Each of the first and second signal lines SL1-1 to SL1-5 and SL2-1 toSL2-4 may include a line portion SL-L and a pad portion SL-P. The padportions SL-P may be provided on a pad region NDA-PD to be aligned toeach other. The input-sensing layer ISL may include signal pads DP-PD.The signal pads DP-PD may be provided on the pad region NDA-PD to bealigned to each other. The signal pads DP-PD may be overlapped with andconnected to the pad portions of the signal lines SGL of FIG. 3B.

In an exemplary embodiment, the first signal lines SL1-1 to SL1-5 andthe second signal lines SL2-1 to SL2-4 may be replaced with a circuitboard, which is separately fabricated, or the like.

As shown in FIG. 5C, the first conductive layer IS-CL1 may include thefirst connecting portions CP1. In addition, the first conductive layerIS-CL1 may include first line portions SL1-11 to SL1-51 of the firstsignal lines SL1-1 to SL1-5 and first line portions SL2-11 to SL2-41 ofthe second signal lines SL2-1 to SL2-4.

The first connecting portions CP1, the first line portions SL1-11 toSL1-51 of the first signal lines SL1-1 to SL1-5, and the first lineportions SL2-11 to SL2-41 of the second signal lines SL2-1 to SL2-4 maybe formed by the same process. The first connecting portions CP1, thefirst line portions SL1-11 to SL1-51 of the first signal lines SL1-1 toSL1-5, and the first line portions SL2-11 to SL2-41 of the second signallines SL2-1 to SL2-4 may be formed of the same material and may have thesame stacking structure. The first connecting portions CP1 may be formedby a process different from that for the first line portions SL1-11 toSL1-51 of the first signal lines SL1-1 to SL1-5 and the first lineportions SL2-11 to SL2-41 of the second signal lines SL2-1 to SL2-4. Thefirst line portions SL1-11 to SL1-51 of the first signal lines SL1-1 toSL1-5 and the first line portions SL2-11 to SL2-41 of the second signallines SL2-1 to SL2-4 may have the same stacking structure, and the firstconnecting portions CP1 may have a stacking structure different fromthose.

In an exemplary embodiment, the first conductive layer IS-CL1 mayinclude the first connecting portions CP1 (e.g., see FIG. 5c ). Here,the second connecting portions CP2 may be formed on the secondconductive layer IS-CL2. Thus, each of the second sensing electrodesIE2-1 to IE2-4 may have a single body shape.

The first insulating layer IS-IL1 may be provided to cover at least thefirst connecting portions CP1. In the present exemplary embodiment, thefirst insulating layer IS-IL1 may be overlapped with at least a portionof the display and non-display regions DD-DA and DD-NDA. The firstinsulating layer IS-IL1 may be provided to cover the first line portionsSL1-11 to SL1-51 of the first signal lines SL1-1 to SL1-5 and the firstline portions SL2-11 to SL2-41 of the second signal lines SL2-1 toSL2-4.

In the present exemplary embodiment, the first insulating layer IS-IL1may be overlapped with the display region DD-DA and the pad regionNDA-PD. The first insulating layer IS-IL1 may be fully overlapped withthe display and non-display regions DD-DA and DD-NDA. The firstinsulating layer IS-IL1 may be provided to define first connectioncontact holes CNT-I, which are formed to partially expose the firstconnecting portions CP1, and second connection contact holes CNT-S,which are formed to partially expose the first line portions SL1-11 toSL1-51 of the first signal lines SL1-1 to SL1-5 and the first lineportions SL2-11 to SL2-41 of the second signal lines SL2-1 to SL2-4.

As shown in FIG. 5D, the second conductive layer IS-CL2 may include thefirst sensor portions SP1, the second sensor portions SP2, and thesecond connecting portions CP2. Each of the second sensing electrodes1E2-1 to 1E2-4 may have a single body shape. The first sensor portionsSP1 may be spaced apart from the second sensing electrodes 1E2-1 to1E2-4.

The second conductive layer IS-CL2 may include second line portionsSL1-12 to SL1-52 of the first signal lines SL1-1 to SL1-5, the padportions SL-P of the first signal lines SL1-1 to SL1-5, second lineportions SL2-12 to SL2-42 of the second signal lines SL2-1 to SL2-4, andthe pad portions SL-P of the second signal lines SL2-1 to SL2-4. Thesecond conductive layer IS-CL2 may include the signal pads DP-PD.

The first sensor portions SP1, the second sensor portions SP2, and thesecond connecting portions CP2 may be formed by the same process. Thefirst sensor portions SP1, the second sensor portions SP2, and thesecond connecting portions CP2 may be formed of or include the samematerial and may have the same stacking structure. The second lineportions SL1-12 to SL1-52 of the first signal lines SL1-1 to SL1-5, thepad portions SL-P of the first signal lines SL1-1 to SL1-5, the secondline portions SL2-12 to SL2-42 of the second signal lines SL2-1 toSL2-4, the pad portions SL-P of the second signal lines SL2-1 to SL2-4,and the signal pads DP-PD may be formed by a process that is the same asor different from that for the first sensor portions SP1, the secondsensor portions SP2, and the second connecting portions CP2.

The second insulating layer IS-IL2 may be overlapped with at least aportion of the display and non-display regions DD-DA and DD-NDA. In thepresent exemplary embodiment, the second insulating layer IS-IL2 may beprovided to expose the pad region NDA-PD.

As shown in FIG. 5E, the first sensor portions SP1 may be electricallyconnected to the first connecting portion CP1 through the firstconnection contact holes CNT-I. The first connecting portion CP1 may beformed of or include a material having electric resistance lower thanthe first sensor portions SP1.

The first connecting portion CP1 may be provided to intersect the secondconnecting portion CP2, and in an exemplary embodiment, to reduce theeffect of parasitic capacitance, the first connecting portion CP1 may beconfigured to have a reduced width, when measured in a horizontaldirection. The first connecting portion CP1 may include a low resistancematerial (e.g., the same metallic material as the first line portionsSL1-11 to SL1-51 of the first signal lines SL1-1 to SL1-5), and this maymake it possible to improve the sensing sensitivity of the input-sensinglayer ISL.

In the present exemplary embodiment, the first insulating layer IS-IL1may be a polymer layer (e.g., an acrylic polymer layer). The secondinsulating layer IS-IL2 may also be a polymer layer (e.g., an acrylicpolymer layer). The polymer layer may be configured to improveflexibility of the display device DD, even when the input-sensing layerISL is directly provided on the display panel DP.

Three first signal lines SL1-1 to SL1-3 of the first signal lines SL1-1to SL1-5 are exemplarily illustrated in FIG. 5F. As an example, in thecase of the first signal line SL1-1, the first line portion SL1-11 andthe second line portion SL1-12 may be electrically connected to eachother through the second connection contact holes CNT-S. Thus, the firstsignal line SL1-1 may have a reduced resistance.

In an exemplary embodiment, one of the first and second line portionsSL1-11 and SL1-12 may be omitted. One of the first and second lineportions of the second signal lines SL2-1 to SL2-4 may be omitted.

The stacking order of the elements constituting the input-sensing layerISL described with reference to FIGS. 5C to 5F may be changed. In anexemplary embodiment, the first sensor portions SP1 and the secondconnecting portion CP2 may be directly provided on the upper insulatinglayer TFL. The first insulating layer IS-IL1 may be provided on theupper insulating layer TFL to cover the first sensor portions SP1 andsecond connecting portion CP2. The first connecting portion CP1, whichis provided on the first insulating layer IS-IL1, may be electricallyconnected to the first sensor portions SP1 through the first connectioncontact holes CNT-I.

FIG. 6A is an enlarged plan view illustrating the display device DDaccording to an exemplary embodiment. FIGS. 6B to 6D are enlarged planviews each illustrating a portion of the display device of FIG. 6A.FIGS. 6E and 6F are enlarged cross-sectional views each illustrating thedisplay device DD according to an exemplary embodiment. The followingdescription of the pixel definition layer PDL will be given based on thedefinition of the first and second portions PDL-1 and PDL-2 describedwith reference to FIG. 3D.

FIG. 6A illustrates the enlarged shape of the region ‘BB’ of FIG. 5B.The region ‘BB’ of FIG. 5B is a region overlapped with the region ‘AA’of FIG. 4A. FIG. 6A shows the planar arrangements of the display panelDP (e.g., see FIG. 5A), the anti-reflection layer RPL (e.g., see FIG.5A), the input-sensing layer ISL (e.g., see FIG. 5A), which areoverlapped with each other in a plan view. Since the first sensorportion SP1 of FIG. 5B is fully overlapped with the region ‘BB’, thefirst sensor portion SP1 is not shown in FIG. 6A. In FIG. 6A, relativepositions between the second portion PDL-2 and the first, second, andthird light-emitting openings OP-G, OP-R, and OP-B of the pixeldefinition layer PDL (e.g., see FIG. 6E), openings OP-BM1, OP-BM2, andOP-BM3 (hereinafter, light blocking openings) of a light blocking layerBM (e.g., FIG. 6E), color filters CF-G, CF-R, and CF-B, and a colorspacer CSP are illustrated.

As shown in FIG. 6A, the light blocking layer BM may be provided in thenon-light-emitting region NPXA. The light blocking layer BM may beformed of or include a light-blocking material. For example, the lightblocking layer BM may include, for example, an organic material havinghigh light absorptivity. The light blocking layer BM may include a blackpigment or a black dye. The light blocking layer BM may include aphoto-sensitive organic material and, for example, may include acoloring agent, such as pigments or dyes. The light blocking layer BMmay have a single- or multi-layered structure.

The light blocking layer BM may be provided to define a first lightblocking opening OP-BM1, a second light blocking opening OP-BM2, and athird light blocking opening OP-BM3 corresponding to the first, second,and third light-emitting openings OP-G, OP-R, and OP-B, respectively.The first, second, and third light-emitting openings OP-G, OP-R, andOP-B may be provided in the first, second, and third light blockingopenings OP-BM1, OP-BM2, and OP-BM3, respectively, when viewed in a planview.

The color filters CF-G, CF-R, and CF-B may include a first color filterCF-G, a second color filter CF-R, and a third color filter CF-B, whichare provided to correspond to the first, second, and thirdlight-emitting openings OP-G, OP-R, and OP-B, respectively. The firstcolor filter CF-G may be formed of or include an organic materialincluding green dye or green pigment. The second color filter CF-R maybe red, and the third color filter CF-B may be blue.

The first, second, and third color filters CF-G, CF-R, and CF-B may notbe overlapped with each other but may have edges that are located to bein contact with each other. In FIG. 6A, the first, second, and thirdcolor filters CF-G, CF-R, and CF-B are illustrated to be spaced apartfrom each other, for clear distinction between the first, second, andthird color filters CF-G, CF-R, and CF-B.

The first, second, and third color filters CF-G, CF-R, and CF-B may besequentially formed, as shown in FIGS. 6B to 6D. The formation of eachof the first, second, and third color filters CF-G, CF-R, and CF-B mayinclude forming a preliminary color layer therefor and patterning thepreliminary color layer using a photolithography process. Because of apotential process error, at least two of the first, second, and thirdcolor filters CF-G, CF-R, and CF-B may be partially overlapped with eachother. The first, second, and third color filters CF-G, CF-R, and CF-Bmay be formed by an inkjet printing method, but the inventive conceptsare not limited to a specific method for forming the first, second, andthird color filters CF-G, CF-R, and CF-B.

The color spacer CSP may be provided in the spacer region surrounded bythe first, second, and third light-emitting openings OP-G, OP-R, andOP-B. In the present exemplary embodiment, the color spacer CSP will bedescribed as a distinct element that is different from the first,second, and third color filters CF-G, CF-R, and CF-B.

When viewed in a plan view, the color spacer CSP may be provided tocover the second portion PDL-2. An overlapping area between the colorspacer CSP and the second portion PDL-2 may be larger than or equal to90% of the area of the color spacer CSP. When viewed in a plan view, thesecond portion PDL-2 may be provided in the color spacer CSP. In anexemplary embodiment, the second portion PDL-2 may be substantiallyfully overlapped with the color spacer CSP. In the case where the secondportion PDL-2 is substantially fully overlapped with the color spacerCSP, the color spacer CSP may be formed to have an area that is largerthan a sum of the area of the second portion PDL-2 and a marginal area,which is given in consideration of process tolerance in a process offorming the color spacer CSP on the second portion PDL-2.

As shown in FIG. 6E, the light blocking layer BM may be provided on theuppermost layer of the upper insulating layers TFL. In the presentexemplary embodiment, the light blocking layer BM may be provided on thecapping layer CPL and may be in contact with the capping layer CPL. Inthe case where the capping layer CPL is omitted, the light blockinglayer BM may be provided on the uppermost layer of the thinencapsulation layer TFE.

The first, second, and third color filters CF-G, CF-R, and CF-B and thecolor spacer CSP may be provided on the light blocking layer BM. Aportion of the light blocking layer BM may be provided between thecapping layer CPL and a first layer CSP-G of the color spacer CSP. Thelight blocking layer BM may be provided near the display device layerDP-OLED, and in this case, reflection light may have a narrow colordistribution property. As a result, it may be possible to improve acolor property of the reflection light. However, the cross-sectionalposition of the light blocking layer BM is not limited to the aboveexample. In an exemplary embodiment, the light blocking layer BM may beomitted.

In the present exemplary embodiment, the color spacer CSP may have alayer structure including at least two layers. For example, as shown inFIG. 6E, the color spacer CSP may be provided to have a triple-layeredstructure.

The first layer CSP-G may be formed of or include the same material asone of the first, second, and third color filters CF-G, CF-R, and CF-B,a second layer CSP-R may be formed of or include the same material asanother one of the first, second, and third color filters CF-G, CF-R,and CF-B, and a third layer CSP-B may be formed of or include the samematerial as the other one of the first, second, and third color filtersCF-G, CF-R, and CF-B. In the present exemplary embodiment, the colorfilters, which are respectively associated with the first, second, andthird layers CSP-G, CSP-R, and CSP-B, will be referred to as the firstcolor filter CF-G, the second color filter CF-R, and the third colorfilter CF-B in the order enumerated.

As shown in FIGS. 6B to 6D, the first layer CSP-G and the first colorfilter CF-G may be formed by the same process and may have a single bodyshape. The second layer CSP-R and the second color filter CF-R may beformed by the same process and may have a single body shape. The thirdlayer CSP-B and the third color filter CF-B may be formed by the sameprocess and may have a single body shape. A stacking structure of thecolor spacer CSP may be determined by a forming order of the first,second, and third color filters CF-G, CF-R, and CF-B, which may bevariously changed.

Even when each corresponding pair of the color filters CF-G, CF-R, andCF-B and the layers CSP-G, CSP-R, and CSP-B are formed by the sameprocess, the first layer CSP-G may be separated from the first colorfilter CF-G, the second layer CSP-R may be separated from the secondcolor filter CF-R, and the third layer CSP-B may be separated from thethird color filter CF-B. This example is not illustrated in thedrawings. Each corresponding pair of the color filters CF-G, CF-R, andCF-B and the layers CSP-G, CSP-R, and CSP-B may have substantially thesame thickness. For example, the first layer CSP-G may have the samethickness as the first color filter CF-G.

In the present exemplary embodiment, the color spacer CSP is illustratedto have a triple-layered structure, but if, in one of the processes ofFIGS. 6B to 6D, only the color filter is formed, the color spacer CSPmay be formed to have a double-layered structure. The color spacer CSPmay have a thickness that is larger than a thickness of each of thefirst, second, and third color filters CF-G, CF-R, and CF-B. This isbecause the color spacer CSP has a multi-layered structure including atleast two layers. The first, second, and third color filters CF-G, CF-R,and CF-B may have the same thickness or at least two differentthicknesses.

As shown in FIG. 6E, the color spacer CSP may compensate a non-uniformdistance between the second electrode CE and the sensing electrode(illustrated as the first sensor portion SP1 in FIG. 7C), which iscaused by the presence of the second portion PDL-2. If the color spacerCSP is not formed, a distance between a region (hereinafter, a firstregion) of the second electrode CE, which is overlapped with the secondportion PDL-2, and the first sensor portion SP1 may be smaller than adistance between another region (hereinafter, a second region) of thesecond electrode CE, which is not overlapped with the second portionPDL-2, and the first sensor portion SP1. The variation in distancebetween the second electrode CE and the first sensor portion SP1 maycause a noise in the input-sensing layer ISL.

In the present exemplary embodiment, a distance D1 between a firstregion SP1-1 of the first sensor portion SP1, which is overlapped withthe color spacer CSP and the base insulating layer (i.e., theintermediate organic layer 30) may be larger than a distance D2 betweena second region SP1-2 of the first sensor portion SP1, which is notoverlapped with the color spacer CSP, and the intermediate organic layer30. A distance between the first region SP1-1 of the first sensorportion SP1 and the second electrode CE may be substantially equal to adistance between the second region SP1-2 of the first sensor portion SP1and the second electrode CE.

Here, a thickness TH3 of the color spacer CSP may be larger than athickness TH2-1 of the second portion PDL-2. A value, which is obtainedby subtracting a thickness of the first layer CSP-G from the thicknessTH3 of the color spacer CSP (e.g., a sum of thicknesses of the secondand third layers CSP-R and CSP-B, in the present exemplary embodiment)may be substantially equal to the thickness TH2-1 of the second portionPDL-2. This is because, as shown in FIG. 6E, the first color filter CF-Gis disposed on the second region SP1-2 of the first sensor portion SP1,when the first layer CSP-G is disposed on the first region SP1-1 of thefirst sensor portion SP1. Here, the thicknesses TH3 and TH2-1 may bevertical lengths of the color spacer CSP and the second portion PDL-2,which are respectively measured in the third direction DR3.

As described above, the first sensor portion SP1 may have a non-flatstructure and may include the first and second regions SP1-1 and SP1-2that are located at different levels. The first sensor portion SP1 mayhave a step structure. The non-flat structure of the first sensorportion SP1 may result from the presence of the color spacer CSP. Asshown in FIG. 6F, a distance D3 between the first region SP1-1 of thefirst sensor portion SP1 and the top surface of the window panel WP maybe smaller than a distance D4 between the second region SP1-2 of thefirst sensor portion SP1, which is not overlapped with the color spacerCSP, and the top surface of the window panel WP. This is becauseportions of the window panel WP covering the first and second regionsSP1-1 and SP1-2 have flat top surfaces.

In the display device DD described with reference to FIGS. 6A to 6F, thecolor spacer CSP is described as an element that is different from thecolor filters CF-G, CF-R, and CF-B. In an aspect of the inventiveconcepts, the layers of the color spacer CSP may be defined as a portionof the color filters CF-G, CF-R, and CF-B.

For example, in FIG. 6B, the first color filter CF-G and the first layerCSP-G may be defined as different portions of the green color filter.For example, the first color filter CF-G may be defined as a firstportion, and the first layer CSP-G may be defined as a second portion.In FIG. 6C, the second color filter CF-R and the second layer CSP-R maybe defined as different portions (e.g., first and second portions,respectively) of the red color filter. In FIG. 6D, the third colorfilter CF-B and the third layer CSP-B may be defined as differentportions (e.g., first and second portions, respectively) of the bluecolor filter.

FIGS. 7A to 7C are enlarged cross-sectional views each illustrating thedisplay device DD according to an exemplary embodiment. Thecross-sectional views of FIGS. 7A to 7C correspond to that of FIG. 6E.However, in order to reduce complexity of the drawings, the layersprovided below the display device layer DP-OLED are not shown in FIGS.7A to 7C. Hereinafter, for concise description, an element previouslydescribed with reference to FIGS. 6A to 6F will be identified by thesame reference number without repeating an overlapping descriptionthereof.

As shown in FIG. 7A, the stacking structure of the color spacer CSP maybe changed. First, a first layer CSP-R may be formed when the secondcolor filter CF-R is formed as shown in FIG. 6C. After forming the firstlayer CSP-R, a second layer CSP-G may be formed when the first colorfilter CF-G is formed as shown in FIG. 6B. Finally, a third layer CSP-Bmay be formed when the third color filter CF-B is formed as shown inFIG. 6D.

As shown in FIGS. 7B and 7C, the position of the light blocking layer BMmay be changed. As shown in FIG. 7B, the light blocking layer BM may beprovided on the color spacer CSP. After the formation of the first tothird color filters CF-G, CF-R, and CF-B, the light blocking layer BMmay be formed. As shown in FIG. 7C, the light blocking layer BM may alsobe formed on the second insulating layer IS-IL2.

FIG. 8A is a plan view illustrating the input-sensing layer ISLaccording to an exemplary embodiment. FIG. 8B is an enlarged plan viewof the region ‘BB’ of FIG. 8A. For concise description, an elementpreviously described with reference to FIGS. 1 to 7C will be identifiedby the same reference number without repeating an overlappingdescription thereof.

As shown in FIG. 8A, the first sensing electrodes 1E1-1 to 1E1-5 and thesecond sensing electrodes 1E2-1 to 1E2-4 may be provided to have a meshshape. Thus, it may be possible to reduce parasitic capacitance betweenthe second electrode CE (e.g., see FIG. 6E) and the first and secondsensing electrodes IE1-1 to 1E1-5 and 1E2-1 to 1E2-4. In addition, aswill be described below, the first sensing electrodes 1E1-1 to 1E1-5 andthe second sensing electrodes 1E2-1 to 1E2-4 may not be overlapped withthe light-emitting regions PXA-R, PXA-G, and PXA-B, and thus may behardly recognized by a user of the display device DD.

The first sensing electrodes IE1-1 to 1E1-5 and the second sensingelectrodes 1E2-1 to 1E2-4 may be formed of or include at least one ofmaterials (e.g., silver, aluminum, copper, chromium, nickel, andtitanium), which can be formed by a low temperature process, but theinventive concepts are not limited thereto. Even when the input-sensinglayer ISL is formed by a successive process, it may be possible toprevent the organic light emitting diodes OLED (e.g., see FIG. 6E) frombeing damaged.

In the present exemplary embodiment, similar to the input-sensing layerISL described with reference to FIGS. 5A to 5F, the first connectingportions CP1 may be formed from the first conductive layer IS-CL1, andthe first sensor portions SP1, the second sensor portions SP2, and thesecond connecting portions CP2 may be formed from the second conductivelayer IS-CL2. In an exemplary embodiment, the input-sensing layer ISLmay further include first and second dummy sensor portions, which areformed from the first conductive layer IS-CL1. The first dummy sensorportions are overlapped with the first sensor portions SP1. The seconddummy sensor portions are overlapped with the second sensor portionsSP2. Each of the first dummy sensor portions may be connected to acorresponding one of the first sensor portions SP1. Each of the seconddummy sensor portions may be connected to a corresponding one of thesecond sensor portions SP2.

As shown in FIG. 8B, the first sensor portion SP1 may be overlapped withthe non-light-emitting region NPXA. The first sensor portion SP1 mayinclude mesh lines, which are arranged to define openings OP-SP1(hereinafter, electrode openings). The electrode openings OP-SP1 mayinclude three opening groups, which corresponds to the first, second,and third light-emitting openings OP-G, OP-R, and OP-B, respectively.Each of the mesh lines may have a triple layered structure (e.g.,including a titanium layer, an aluminum layer, and a titanium layer). Inthe above examples, the electrode openings OP-SP1 are illustrated tocorrespond to the first, second, and third light-emitting openings OP-G,OP-R, and OP-B in the one-to-one manner, but the inventive concepts arenot limited thereto. Each of the electrode openings OP-SP1 maycorrespond to two or more openings of the openings OP-G, OP-R, and OP-B.

In FIGS. 6A to 6F and FIGS. 8A and 8B, each of the input-sensing layersISL is illustrated to be a double-layered touch sensor, which includestwo conductive layers and is operated in the capacitance-sensing manner,but the inventive concepts are not limited thereto. In an exemplaryembodiment, the input-sensing layer ISL may be a single-layered touchsensor, which includes a single conductive layer and is operated in thecapacitance-sensing manner.

The single-layered touch sensor may include a plurality of sensingelectrodes IE and a plurality of signal lines SL. The sensing electrodesIE may have specific coordinate information. For example, the sensingelectrodes IE may be arranged in a matrix shape and may be connected tothe signal lines SL, respectively. The sensing electrodes IE may beprovided to have a mesh shape and may be operated in a self-capacitancemanner.

FIGS. 9A, 9B, 9C, 10A, 10B, and 11 are perspective views eachillustrating the display device DD according to an exemplary embodiment.Each of the display devices DD described with reference to FIGS. 1 to 8Bmay be used to realize one of flexible display devices to be describedbelow.

As shown in FIGS. 9A to 9C, the display device DD may include aplurality of regions, which are defined based on its operation mode. Thedisplay device DD may include a first region NBA1, a second region NBA2,and a third region BA between the first and second regions NBA1 andNBA2. The third region BA may be configured to be bent about a bendingaxis BX and to have a variable curvature. Hereinafter, the first regionNBA1, the second region NBA2, and the third region BA will be referredto as a first non-bending region NBA1, a second non-bending region NBA2,and a bending region BA, respectively.

As shown in FIG. 9B, the display device DD may be configured to performan inner-bending operation, allowing the display surface DD-IS of thefirst non-bending region NBA1 to face the display surface DD-IS of thesecond non-bending region NBA2. As shown in FIG. 9C, the display moduleDM may be configured to perform an outer-bending operation, allowing thedisplay surface DD-IS to be exposed to the outside.

In an exemplary embodiment, the display device DD may include aplurality of the bending regions BA. In addition, the bending region BAmay be defined, based on a shape of the display device DD manipulated bya user. For example, unlike that shown in FIGS. 9B and 9C, the bendingregion BA may be defined to be parallel to the first direction axis DR1or in a diagonal direction. An area of the bending region BA may not befixed and may vary depending on its curvature radius. In an exemplaryembodiment, the display device DD may be configured to repeat only anoperation mode illustrated in FIGS. 9A and 9B or to repeat only anoperation mode illustrated in FIGS. 9A and 9C.

As shown in FIGS. 9A and 9B, the display device DD may include the firstnon-bending region NBA1, the second non-bending region NBA2, and thebending region BA. The first non-bending region NBA1, the secondnon-bending region NBA2, and the bending region BA may be defined basedon the display panel DP (e.g., see FIGS. 2A and 2B). The input-sensingunit, the anti-reflection unit, and the window unit may be provided inonly the first non-bending region NBA1.

As shown in FIG. 10A, a width, in the second direction DR2, of thedisplay panel DP may vary from region to region. For example, thebending region BA and the second non-bending region NBA2 may have widthsless than the width of the first non-bending region NBA1. Since thebending region BA has a relatively small width, the bending region BAmay be easily bent. Meanwhile, as shown in FIG. 10A, the firstnon-bending region NBA1 may include a border region having a graduallydecreasing width. In an exemplary embodiment, the border region having agradually decreasing width may be omitted. As shown in FIG. 10B, whenthe display device DD is in a bent state, the second non-bending regionNBA2 may face the first non-bending region NBA1 and may be spaced apartfrom the first non-bending region NBA1.

As shown in FIG. 11, the display device DD may include three bendingregions BA1, BA2, and BA3. In comparison with the display device DD ofFIG. 10B, the second and third bending regions BA2 and BA3 may bedefined by bending two opposite edge regions of the first non-bendingregion NBA1 facing each other in the second direction DR2. The firstbending region BA1 may correspond to the bending region BA of FIGS. 10Aand 10B. The input-sensing unit, the anti-reflection unit, and thewindow unit of FIGS. 2A to 2B may be overlapped with the firstnon-bending region NBA1 and the second and third bending regions BA2 andBA3.

Because of a shape of a pixel definition layer, a space between a secondelectrode and a sensing electrode may have a non-uniform thickness.According to an exemplary embodiment, a color filter and/or a colorspacer may be provided to reduce a variation in thickness of the spacethat is formed between the second and sensing electrodes, and this maymake it possible to prevent or suppress the input-sensing unit frombeing affected by noise signals resulting from the display panel.

The display device may further include a light blocking layer. In thiscase, it may be possible to reduce reflectance of external light.Furthermore, it may be possible to allow reflection light to have anarrow color distribution and the consequent improved color property.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A display device, comprising: a display panelcomprising a first light-emitting region, a second light-emittingregion, a third light-emitting region, and a non-light-emitting region,wherein the non-light-emitting region is adjacent to the first to thirdlight-emitting regions; an anti-reflection unit directly disposed on thedisplay panel; and an input-sensing unit directly disposed on theanti-reflection unit, the input-sensing unit comprising a sensingelectrode, wherein the display panel further comprises: a first lightemitting element, a second light emitting element, and a third lightemitting element overlapping the first to third light-emitting regions,respectively, each of the first to third light emitting elementscomprising a first electrode, which is in contact with a base insulatinglayer, a second electrode, and a light emitting layer, which is disposedbetween the first electrode and the second electrode; a pixel definitionlayer, which is in contact with the base insulating layer and isdisposed below the second electrode, the pixel definition layercomprising a first portion, in which a light-emitting opening exposingthe first electrode is defined, and a second portion, which is disposedon, and overlaps the first portion; and a plurality of thin filmsdisposed on the second electrode, wherein the anti-reflection unitcomprises: a first color filter, a second color filter, and a thirdcolor filter overlapping the first to third light emitting elements,respectively; and a color spacer, which overlaps the second portion andis thicker than each of the first to third color filters, wherein adistance between a first portion of the sensing electrode and the baseinsulating layer is larger than a distance between a second portion ofthe sensing electrode and the base insulating layer, wherein the firstportion of the sensing electrode overlaps the color spacer, the secondportion of the sensing electrode does not overlap the color spacer. 2.The display device of claim 1, wherein a distance between the firstportion of the sensing electrode and the second electrode issubstantially equal to a distance between the second portion of thesensing electrode and the second electrode.
 3. The display device ofclaim 1, wherein a thickness of the color spacer is larger than athickness of the second portion of the pixel definition layer.
 4. Thedisplay device of claim 1, wherein the color spacer comprises at least afirst layer and a second layer disposed on the first layer, the firstlayer comprises a same material as one of the first to third colorfilters, and the second layer comprises a same material as another oneof the first to third color filters.
 5. The display device of claim 4,wherein the first layer has substantially a same thickness as the one ofthe first to third color filters, and the second layer has substantiallya same thickness as the another one of the first to third color filters.6. The display device of claim 4, wherein the first layer and the one ofthe first to third color filters have a single body shape, and thesecond layer and the another one of the first to third color filtershave a single body shape.
 7. The display device of claim 4, wherein thecolor spacer further comprises a third layer, wherein the third layercomprises a same material as a remaining one of the first to third colorfilters, the third layer has substantially a same thickness as theremaining one of the first to third color filters, and is disposed onthe first layer and the second layer.
 8. The display device of claim 7,wherein a sum of the thickness of the second layer and the thickness ofthe third layer is substantially equal to a thickness of the secondportion of the pixel definition layer.
 9. The display device of claim 4,wherein the anti-reflection unit further comprises a light blockinglayer, which overlaps the non-light-emitting region, and a lightblocking opening corresponding to the light-emitting opening is definedin the light blocking layer.
 10. The display device of claim 9, whereinthe light blocking layer is disposed between a topmost one of theplurality of thin films and the first layer.
 11. The display device ofclaim 9, wherein the light-emitting opening is positioned in the lightblocking opening.
 12. The display device of claim 1, wherein anoverlapping area between the second portion of the pixel definitionlayer and the color spacer is larger than or equal to 90% of an area ofthe color spacer.
 13. The display device of claim 1, wherein the secondportion of the pixel definition layer has a length of a side or adiameter ranging from about 10 μm to about 25 μm.
 14. The display deviceof claim 1, wherein the first portion of the pixel definition layer andthe second portion of the pixel definition layer have a single bodyshape.
 15. The display device of claim 1, wherein the sensing electrodeis disposed to have a mesh structure, and an electrode openingcorresponding to the light-emitting opening is defined in the sensingelectrode.
 16. A display device, comprising: a display panel comprisinga first light-emitting region, a second light-emitting region, a thirdlight-emitting region and a non-light-emitting region, wherein thenon-light-emitting region is adjacent to the first to thirdlight-emitting regions; a first color filter, a second color filter, anda third color filter directly disposed on the display panel andoverlapping the first to third light-emitting regions, respectively; andan input-sensing unit directly disposed on the first to third colorfilters, the input-sensing unit comprising a sensing electrode, whereinthe display panel comprises: a first light emitting element, a secondlight emitting element, and a third light emitting element overlappingthe first to third light-emitting regions, respectively, each of thefirst to third light emitting elements comprising a first electrode,which is in contact with a base insulating layer, a second electrode,and a light emitting layer, which is disposed between the firstelectrode and the second electrode; a pixel definition layer, which isin contact with the base insulating layer and is disposed below thesecond electrode, the pixel definition layer comprising a first portion,in which a light-emitting opening exposing the first electrode isdefined, and a second portion, which is located adjacent to the firstportion and has a thickness larger than the first portion; and aplurality of thin films disposed on the second electrode, a portion ofthe first color filter overlaps the second portion of the pixeldefinition layer, and a portion of the second color filter overlaps thesecond portion of the pixel definition layer and is disposed on theportion of the first color filter.
 17. The display device of claim 16,wherein a portion of the third color filter overlaps the second portionof the pixel definition layer and is disposed on the portion of thesecond color filter.
 18. The display device of claim 17, wherein a sumof the thickness of the portion of the second color filter and thethickness of the portion of the third color filter, which overlaps thesecond portion of the pixel definition layer, is substantially equal tothe thickness of the second portion of the pixel definition layer. 19.The display device of claim 16, further comprising a light blockinglayer, which overlaps the non-light-emitting region, and a lightblocking opening corresponding to the light-emitting opening is definedin the light blocking layer.
 20. A display device, comprising: a displaypanel; an input-sensing unit directly disposed on the display panel, theinput-sensing unit comprising a sensing electrode; a first color filter,a second color filter, and a third color filter disposed between thedisplay panel and the input-sensing unit; and a window unit disposed onthe input-sensing unit, wherein the display panel comprises: firstelectrodes disposed on a base insulating layer; a pixel definition layerdisposed on the base insulating layer, the pixel definition layercomprising a first portion, in which openings exposing the firstelectrodes are defined, and a second portion, which is located adjacentto the first portion and has a thickness larger than the first portion;a second electrode disposed on the pixel definition layer; and lightemitting layers disposed between the second electrode and the firstelectrodes, wherein: a portion of the first color filter overlaps thesecond portion, a portion of the second color filter overlaps the secondportion and is disposed on the portion of the first color filter, and adistance between a top surface of the window unit and a first portion ofthe sensing electrode is larger than a distance between the top surfaceof the window unit and a second portion of the sensing electrode, thefirst portion of the sensing electrode overlaps the first portion of thepixel definition layer, and the second portion of the sensing electrodeoverlaps the second portion of the pixel definition layer.